PART |
Description |
Maker |
UPA1817 UPA1817GR-9JG UPA1817GR-9JG-E2 |
Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC Corp.
|
2SJ557 2SJ557-T2B 2SJ557-T1B |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
UPA1911TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1913TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
UPA1730G-E1 UPA1730TP-E2 UPA1730TP-E1 UPA1730G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
SP8J5 |
4V Drive Pch Pch MOS FET
|
Rohm
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
|
RTM002P02 |
2.5V Drive Pch MOS FET
|
ROHM[Rohm]
|
RTE002P02 |
2.5V DRIVE PCH MOS FET
|
Rohm
|
QS5U28 QS5U28-06 |
2.5V Drive Pch SBD MOS FET
|
Rohm
|
2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|